2018 Workshop Plenary Speakers

Don Disney, Fellow, GLOBALFOUNDRIES, U.S.A.

Title: Heterogeneous Integration of GaN and Silicon for Power Conversion


Gallium Nitride (GaN) power devices offer significant system-level performance advantages over silicon power devices for many power conversion applications.  In recent years, there has been rapid progress toward addressing the key barriers to wide-spread adoption of GaN power, including technology maturity, reliability, manufacturability, and cost.  Another challenge that is receiving significant attention is the integration of GaN power devices along with control circuitry to enable power supplies in package with optimized system cost and performance.  This presentation will compare several approaches to GaN/silicon integration, including a review of published materials and original work performed by GLOBALFOUNDRIES and affiliates.   In one approach, wafer-to-wafer bonding is employed to enable full 200mm wafers that include silicon CMOS control circuitry and GaN power devices interconnected using standard CMOS backend metallization.  In another approach, die-to-wafer bonding is used to integrate GaN power transistors on top of silicon bipolar-CMOS-DMOS (BCD) wafers.  The presentation will include previously unpublished results from several successful technology demonstrators, including DC-DC converters that comprise silicon BCD control circuits and GaN power output stages.


Don Disney received his PhD EE from Stanford University (California, USA).  He has worked for more than 20 years in the field of semiconductor technology, serving in senior engineering and management positions at Delco Electronics, Power Integrations, Advanced Analogic Technologies, Monolithic Power Systems, and Avogy.  He presently serves as a Fellow in the Technology Development team of GLOBALFOUNDRIES, responsible for the development of high-voltage technologies and advanced development projects including integrated voltage regulators and the integration of III-V devices.  Dr. Disney was recently conferred the title of IEEE Fellow for his contributions to power integrated circuits and energy efficiency applications.  His contributions to the field of power semiconductors span many technologies, including silicon-on-insulator (SOI) power devices, insulated gate bipolar transistors (IGBTs), high-voltage integrated circuits (HVICs), Bipolar-CMOS-DMOS (BCD), and power MOSFETs.  He has authored several IEEE papers and more than 150 US patents. He has served the IEEE Electron Device Society (EDS) and Power Electronics Society (PELS) in various capacities including technical program committee of the PowerSoC Workshop, technical program chair and general chair of the International Symposium on Power Semiconductors and ICs, and chair of the EDS Technical Committee on Power Devices and ICs.

Jim Doyle, Dialog Semiconductor, U.S.A.

Title: A 100Mhz 8 Ampere 4 Phase Buck with 87% Efficiency Using a Low Cost 0.13u Process Providing Power for Mobile CPU and GPU and Evolution to Inductors on Die

Peter Peng Zhu, Huawei, People Republic of China

Title: Development of 100 MHz IVR with Integrated Inductor

Louis Chen,  ASE, Taiwan

Title: New Generation Power Packaging Technology